Nova Publishers
My Account Nova Publishers Shopping Cart
HomeBooksSeriesJournalsReference CollectionseBooksInformationSalesImprintsFor Authors
            
  Top » Catalog » Books » Computer Science and Robotics » My Account  |  Cart Contents  |  Checkout   
Quick Find
  
Use keywords to find the product you are looking for.
Advanced Search
What's New? more
Advances in Nanotechnology. Volume 20
$250.00
Shopping Cart more
0 items
Information
Shipping & Returns
Privacy Notice
Conditions of Use
Contact Us
Bestsellers
01.Robotics in Surgery: History, Current and Future Applications
02.From Problem Toward Solution: Wireless Sensor Networks Security
03.Introduction to Graph and Hypergraph Theory
04.Wiki Supporting Formal and Informal Learning
05.Intelligent Vehicle Systems: A 4D/RCS Approach
06.Artificial Intelligence in Energy and Renewable Energy Systems
07.Advances in Security Information Management: Perceptions and Outcomes
08.Computer Vision and Robotics
09.MOSFETs: Properties, Preparations and Performance
10.Expert Systems Research Trends
Notifications more
NotificationsNotify me of updates to MOSFETs: Properties, Preparations and Performance
Tell A Friend
 
Tell someone you know about this product.
MOSFETs: Properties, Preparations and Performance
Retail Price: $195.00
10% Online Discount
You Pay:

$175.50
Authors: Noah T. Andre and Lucas M. Simon 
Book Description:
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a device used to amplify or switch electronic signals. It is by far the most common field-effect transistor in both digital and analog circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material, and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOSFET, pMOSFET. The width of the channel, which determines how well the device conducts, is controlled by an electrode called the gate, separated from channel by a thin layer of oxide insulation. The insulation keeps current from flowing between the gate and channel. MOSFETs are useful for high-speed switching applications and also on integrated circuits in computers.

Table of Contents:
Preface

Chapter 1: Novel Device Concepts to Overcome MOSFET Limits
(Ulrich Abelein, Ignaz Eisele, Bundeswehr University Munich, Institute of Physics, Werner-Heisenberg, Neubiberg, Germany) (pp. 1-59)

Chapter 2: Efficient Parallel Monte Carlo Simulations Using Finite Element Tetrahedral Meshes for Novel Thin-Body MOSFET Architectures
(Manuel Aldegunde, Antonio J. Garc'ia-Loureiro, Departamento de Electr'onica y Computaci'on Universidad de Santiago de Compostela, Spain, Natalia Seoane, Karol Kalna, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow, United Kingdom) (pp. 61-84)

Chapter 3: Cryogenic Operation of Power MOSFETs
(Hua Ye and Pradeep Haldar, State University of New York at Albany)(pp. 85-114)

Chapter 4: Redesign and Optimization of Semiconductor Devices and Circuits
(Petru Andrei, Florida State University and Florida, A&M University, Tallahassee, FL, USA)(pp. 115-167)

Chapter 5: Thin and Ultra-Thin SiO2 Gate Oxide in Metal-Oxide-Semiconductor Structors Under Electrical Stresses: Reliability Predictions and Degradation Mechanism Models
(C. Petit, D. Zander, Centre de Recherche en Sciences et Technologies de l'Information et de la Communication, CReSTIC, Université de Reims, Reims Cedex, France)(pp. 169-215)

Chapter 6: Some Medical Applications of MOSFETs in Radiation Therapy: Surface Dose and Electron Backscatter Measurements with Monte Carlo Simulations
(James Chun Lam Chow, Radiation Medicine Program, Princess Margaret Hospital, Toronto, Canada, Department of Radiation Oncology, University of Toronto, Toronto, Canada, Department of Physics, University of Waterloo, Waterloo, Canada, Department of Physics, Ryerson University, Toronto, Canada) (pp. 217-251)

Chapter 7: Surrounding-Gate MOSFETs for Transistor Scaling: Devices, Fabrication and Modeling
(Yijian Chen, Applied Materials, Santa Clara, CA, USA) (pp. 253-273)

Chapter 8: Quantum, Self Heating and Hot Electron Effects of Si-Based Double-Gate MOSFET and GaN-Based MOS-HFET
(Xiaoshuang Chen, Weida Hu, Wei Lu, National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China)(pp. 275-299)

Chapter 9: Bulk FinFETs: Fabrication and Threshold Voltage
(Jong-Ho Lee, School of EECS, Kyungpook National University, Buk-Gu, Daegu, Korea)(pp. 301-353)

Chapter 10: Discussion on 1/f Noise in CMOS Transistors: Modelling- Simulation and Measurement Techniques
(T. Noulis, S. Siskos, Electronics Laboratory of Physics Department, Aristotle University of Thessaloniki, Aristotle University Campus, Thessaloniki, Greece, L. Bary, G. Sarrabayrouse, LAAS-CNRS, University of Toulouse, Toulouse Cedex, France)(pp. 355-379)

Chapter 11: A Rigorous Analysis of the Parameters Which Govern the Silc in MOSFET's with Oxide Thickness in the 1-2 Nanometer Range
(D. Bauza, G. Ghibaudo, F. Rahmoune, Institut de Microélectronique, Electromagnétisme et Photonique(IMEP), (INP Grenoble, UJF, CNRS), Minatec, Parvis Louis Neel, BP, France)(pp. 381-400)

Chapter 12: Analog and Digital Circuit Functionality Under the Influence of Gate Oxide Degradation and Breakdown
(R. Rodriguez, J. Martin-Martinez, R. Fernández, M. Nafria, X. Aymerich, Departamento d'Enginyeria Electrónica, ETSE, Universitat Autónoma de Barcelona, Bellaterra, Barcellona, Spain)(pp. 401-419)

Chapter 13: MOSFET's Programmable Conductance: The Way of VLSI Implementation for Emerging Applications from Biologically Plausible Neuromorphic Devices to Mobile Communications
(I.S. Han, Institute for Information Technology Covergence Korea Advanced Institute of Science and Technology, Daejeon, Korea(South))(pp. 421-429)

Index

   Binding: Hardcover
   Pub. Date: 2008, 4th Quarter
   ISBN: 978-1-60456-762-5
   Status: AV
  
Status Code Description
AN Announcing
FM Formatting
PP Page Proofs
FP Final Production
EP Editorial Production
PR At Prepress
AP At Press
AV Available
  
Customers who bought this product also purchased
Airports: Performance, Risks, and Problems
Airports: Performance, Risks, and Problems
River Pollution Research Progress
River Pollution Research Progress
Multiple Effect Distillation of Seawater Using Solar Energy
Multiple Effect Distillation of Seawater Using Solar Energy
Green Movement in Business
Green Movement in Business
Wind Energy in Electricity Markets with High Wind Penetration
Wind Energy in Electricity Markets with High Wind Penetration
Leading-Edge Electric Power Research
Leading-Edge Electric Power Research
Special Focus Titles
01.Global Political Economy after the Crisis: Theoretical Perspectives and Country Experiences
02.Palliative Care: Perspectives, Practices and Impact on Quality of Life. A Global View, Volume 1
03.Trace Metals: Evolution, Environmental and Ecological Significance
04.Informal Learning: Perspectives, Challenges and Opportunities
05.Dissolved Organic Matter (DOM): Properties, Applications and Behavior
06.Green Polymeric Materials: Advances and Sustainable Development
07.Readings in the 20th Century Genocide of the Syriac Orthodox Church of Antioch (Sayfo)
08.Human Collaboration in Homeland Security (DVD Included)
09.Health and Freedom in the Balance: Exploring the Tensions among Public Health, Individual Liberty, and Governmental Authority
10.Innovations in Dialysis Vascular Access Surgery
11.Major Depressive Disorder: Risk Factors, Characteristics and Treatment Options
12.Inulin: Chemical Properties, Uses and Health Benefits

Nova Science Publishers
© Copyright 2004 - 2017

MOSFETs: Properties, Preparations and Performance