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Atomic-Level Modeling of Ultrafast Laser Interaction with Semiconductor (pp. 103-136) $100.00
Authors:  (Shan Jiang and Yong Gan, Department of Civil and Environmental Engineering, University of Missouri, Columbia, MO, USA, and others)
A hybrid numerical method that incorporates a self-consistent two-step energy
transfer model into the molecular dynamics has been proposed for modeling the ultrafast
laser interaction with semiconductors. An additional damping force is inserted into the
equations of motion of atoms to include the energy exchange between the free electronhole
pairs and the lattice, and a semi-implicit finite difference algorithm is formulated for
solving the free carrier energy transport equation. Meanwhile, the transient optical
properties of reflectivity and absorption coefficient are computed based on the Drude
formula. By using the proposed hybrid method, the thermomechanical responses of a
silicon thin film induced by single-pulse ultrafast lasers and ultrafast laser bursts have
been simulated. For the single-pulse heating, the carrier temperature and number density
rise fast to their maximum whereas the lattice temperature increases at a much slower
pace. The laser heating also induces a strong stress wave in the film, with the maximum
compressive and tensile stresses near the front and back surfaces, respectively. At a given
pulse duration, higher laser fluence yields higher carrier temperature and density as well
as lattice temperature. For a given fluence, the increase of pulse duration leads to lower
carrier density and temperatures, and weaker stress wave. At higher fluence of 0.2 J/cm2,
the 150-fs pulse produces a lower lattice temperature than the 1.5-ps and 6-ps ones, as a
result of the increase of reflectivity at high carrier density. On the other hand, for the laser
burst irradiation, it is found that with an identical total energy, more pulses or longer
pulse separation time brings about lower carrier temperature and density and weaker
stress wave. The same trend is also observed for the lattice temperature at the total laser
fluence of 0.1 J/cm2 instead of 0.2 J/cm2, due to the dynamic change of reflectivity. In addition, the bursts with a small pulse number or a short pulse separation time could
result in the dynamic stress wave comparable to that by single-pulse femtosecond laser
heating, implying the advantage of the laser burst over the single laser pulse in the
semiconductor processing. 

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Atomic-Level Modeling of Ultrafast Laser Interaction with Semiconductor (pp. 103-136)